Hochschulschrift
Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Dimensions
-
21 cm
- Extent
-
124 S.
- Language
-
Englisch
- Notes
-
Ill., graph. Darst.
Aachen, Techn. Hochsch., Diss., 2010 (Nicht für den Austausch)
- Classification
-
Elektrotechnik, Elektronik
- Keyword
-
Heterostruktur-Bauelement , Nitride , HEMT
- Creator
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.06.2025, 2:17 PM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
Other Objects (12)
Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
GaN-based heterostructure field effect transistors and MMICs for high frequency applications
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
Threshold Voltage Engineering of GaN-based n-Channel and p-Channel Heterostructure Field Effect Transistors
GaN-based Tri-gate high electron mobility transistors
GaN-based Tri-gate high electron mobility transistors
Optimization and characterization of GaN-based high electron mobility transistors
GaN-based high electron mobility transistors with high Al-content barriers
Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy
GaN-based HEMTs for High Voltage Operation : design, technology and characterization
Technology of GaN-based large area CAVETs with co-integrated HEMTs
Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
GaN-based heterostructure field effect transistors and MMICs for high frequency applications
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
Threshold Voltage Engineering of GaN-based n-Channel and p-Channel Heterostructure Field Effect Transistors
GaN-based Tri-gate high electron mobility transistors
GaN-based Tri-gate high electron mobility transistors
Optimization and characterization of GaN-based high electron mobility transistors
GaN-based high electron mobility transistors with high Al-content barriers
Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy
GaN-based HEMTs for High Voltage Operation : design, technology and characterization
Technology of GaN-based large area CAVETs with co-integrated HEMTs
Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
GaN-based heterostructure field effect transistors and MMICs for high frequency applications
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
Threshold Voltage Engineering of GaN-based n-Channel and p-Channel Heterostructure Field Effect Transistors
GaN-based Tri-gate high electron mobility transistors
GaN-based Tri-gate high electron mobility transistors
Optimization and characterization of GaN-based high electron mobility transistors
GaN-based high electron mobility transistors with high Al-content barriers
Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy
GaN-based HEMTs for High Voltage Operation : design, technology and characterization