Hochschulschrift
GaN-based heterostructure field effect transistors and MMICs for high frequency applications
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783832282820
- Maße
-
21 cm
- Umfang
-
V, 165 S.
- Sprache
-
Englisch
- Anmerkungen
-
Ill., graph. Darst.
Zugl.: Darmstadt, Techn. Univ., Diss., 2009
- Klassifikation
-
Elektrotechnik, Elektronik
- Schlagwort
-
HEMT
Heterostruktur-Bauelement
Aluminiumnitrid
Galliumnitrid
Kleinsignalverhalten
Großsignalverhalten
MIS-FET
Heterostruktur-Bauelement
Aluminiumnitrid
Galliumnitrid
Kleinsignalverhalten
Großsignalverhalten
HEMT
Aluminiumnitrid
Galliumnitrid
MMIC
Kleinsignalverhalten
Großsignalverhalten
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.06.2025, 13:48 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Objekttyp
- Hochschulschrift
Beteiligte
- Seo, Sanghyun
- Shaker
Entstanden
- 2009
Ähnliche Objekte (12)
Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
Threshold Voltage Engineering of GaN-based n-Channel and p-Channel Heterostructure Field Effect Transistors
GaN-based Tri-gate high electron mobility transistors
GaN-based Tri-gate high electron mobility transistors
Optimization and characterization of GaN-based high electron mobility transistors
GaN-based high electron mobility transistors with high Al-content barriers
Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy
Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure
Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors
Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
Threshold Voltage Engineering of GaN-based n-Channel and p-Channel Heterostructure Field Effect Transistors
GaN-based Tri-gate high electron mobility transistors
GaN-based Tri-gate high electron mobility transistors
Optimization and characterization of GaN-based high electron mobility transistors
GaN-based high electron mobility transistors with high Al-content barriers
Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy
Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure
Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors
Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
Threshold Voltage Engineering of GaN-based n-Channel and p-Channel Heterostructure Field Effect Transistors
GaN-based Tri-gate high electron mobility transistors
GaN-based Tri-gate high electron mobility transistors
Optimization and characterization of GaN-based high electron mobility transistors
GaN-based high electron mobility transistors with high Al-content barriers
Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy
Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure