Hochschulschrift
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
Aachen, Techn. Hochsch., Diss., 2013
- Klassifikation
-
Elektrotechnik, Elektronik
- Schlagwort
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HEMT , Quaternäres System , Polarisation , Halbleiter , Galliumnitrid
- Ereignis
-
Veröffentlichung
- (wo)
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Aachen
- (wer)
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Hochschulbibliothek der Rheinisch-Westfälischen Technischen Hochschule Aachen
- (wann)
-
2013
- Urheber
- URN
-
urn:nbn:de:hbz:82-opus-46092
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:46 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
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Objekttyp
- Hochschulschrift
Beteiligte
- Ketteniß, Nico
- Hochschulbibliothek der Rheinisch-Westfälischen Technischen Hochschule Aachen
Entstanden
- 2013
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