New Ga/N‐based Active Lewis Pairs, Trifunctional Ga–Ga Compounds, Reactions with Cyanamide and Dual Insertion of Isocyanate
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
New Ga/N‐based Active Lewis Pairs, Trifunctional Ga–Ga Compounds, Reactions with Cyanamide and Dual Insertion of Isocyanate ; volume:645 ; number:20 ; year:2019 ; pages:1205-1214 ; extent:10
Zeitschrift für anorganische und allgemeine Chemie ; 645, Heft 20 (2019), 1205-1214 (gesamt 10)
- Creator
-
Uhl, Werner
Hengesbach, Frank
Isermann, Jennifer
Soleimani, Meisam
Schürmann, Lina
Hepp, Alexander
Layh, Marcus
- DOI
-
10.1002/zaac.201900195
- URN
-
urn:nbn:de:101:1-2022080712492404004789
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:23 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Uhl, Werner
- Hengesbach, Frank
- Isermann, Jennifer
- Soleimani, Meisam
- Schürmann, Lina
- Hepp, Alexander
- Layh, Marcus
Other Objects (12)
Building blocks of vertical GaN-based devices
GaN-based Tri-gate high electron mobility transistors
Analysis of Loss Processes in GaN-based LEDs
GaN-based Tri-gate high electron mobility transistors
Synthesis and unprecedented reactivity of Ga/P-based frustrated Lewis pairs
Wide-bandgap GaN-based watt-class photonic-crystal lasers
Testing the temperature limits of GaN-based HEMT devices
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer
Magnetotransport in cleaved edge overgrown Fe/GaAs-based and rare-earth-doped GaN-based heterostructures
Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN
Building blocks of vertical GaN-based devices
GaN-based Tri-gate high electron mobility transistors
Analysis of Loss Processes in GaN-based LEDs
GaN-based Tri-gate high electron mobility transistors
Synthesis and unprecedented reactivity of Ga/P-based frustrated Lewis pairs
Wide-bandgap GaN-based watt-class photonic-crystal lasers
Testing the temperature limits of GaN-based HEMT devices
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer
Magnetotransport in cleaved edge overgrown Fe/GaAs-based and rare-earth-doped GaN-based heterostructures
Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN
Building blocks of vertical GaN-based devices
GaN-based Tri-gate high electron mobility transistors
Analysis of Loss Processes in GaN-based LEDs
GaN-based Tri-gate high electron mobility transistors
Synthesis and unprecedented reactivity of Ga/P-based frustrated Lewis pairs
Wide-bandgap GaN-based watt-class photonic-crystal lasers
Testing the temperature limits of GaN-based HEMT devices
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer
Magnetotransport in cleaved edge overgrown Fe/GaAs-based and rare-earth-doped GaN-based heterostructures