Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
1556-276X
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN ; volume:10 ; number:1 ; day:27 ; month:2 ; year:2015 ; pages:1-5 ; date:12.2015
Nanoscale research letters ; 10, Heft 1 (27.2.2015), 1-5, 12.2015

Creator
Hu, Xiao-Long
Wang, Hong
Zhang, Xi-Chun
Contributor
SpringerLink (Online service)

DOI
10.1186/s11671-015-0792-8
URN
urn:nbn:de:101:1-2021082321080414458571
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:54 AM CEST

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Associated

  • Hu, Xiao-Long
  • Wang, Hong
  • Zhang, Xi-Chun
  • SpringerLink (Online service)

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