Hochschulschrift
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Dimensions
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21 cm
- Extent
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127 S.
- Language
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Englisch
- Notes
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Ill., graph. Darst.
Aachen, Techn. Hochsch., Diss., 2013 (Nicht für den Austausch)
- Classification
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Elektrotechnik, Elektronik
- Keyword
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HEMT, Quaternäres System, Polarisation, Halbleiter, Galliumnitrid
- Creator
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.06.2025, 1:47 PM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
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GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
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Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
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GaN-based Tri-gate high electron mobility transistors
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