Hochschulschrift
Optimization and characterization of GaN-based high electron mobility transistors
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783844006834
- Maße
-
21 cm, 248 g
- Umfang
-
VIII, 153 S.
- Sprache
-
Englisch
- Anmerkungen
-
Ill., graph. Darst.
Zugl.: Zürich, Eidgenöss. Techn. Hochsch., Diss., 2011
- Klassifikation
-
Elektrotechnik, Elektronik
- Schlagwort
-
HEMT
Galliumnitrid
Millimeterwelle
Passivierung
Trockenätzen
Ionenimplantation
HEMT
Galliumnitrid
Aluminiumnitrid
Halbleitersubstrat
Silicium
Millimeterwelle
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.06.2025, 14:14 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Objekttyp
- Hochschulschrift
Beteiligte
- Sun, Haifeng
- Shaker
Entstanden
- 2012
Ähnliche Objekte (12)
GaN-based Tri-gate high electron mobility transistors
GaN-based Tri-gate high electron mobility transistors
GaN-based high electron mobility transistors with high Al-content barriers
AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
Reliability studies of GaN High Electron Mobility Transistors
Biofunctionalization of GaN/AlGaN/GaN High Electron Mobility Transistors
AlGaN,GaN-based millimeter-wave high electron mobility transistors
Fabrication and characterization of AlGaN/GaN high electron mobility transistors
Au‐Free Ohmic Contact for GaN High‐Electron‐Mobility Transistors
Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
On the origin of the turn-on voltage drop of GaN-based current aperture vertical electron transistors
GaN-based Tri-gate high electron mobility transistors
GaN-based Tri-gate high electron mobility transistors
GaN-based high electron mobility transistors with high Al-content barriers
AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
Reliability studies of GaN High Electron Mobility Transistors
Biofunctionalization of GaN/AlGaN/GaN High Electron Mobility Transistors
AlGaN,GaN-based millimeter-wave high electron mobility transistors
Fabrication and characterization of AlGaN/GaN high electron mobility transistors
Au‐Free Ohmic Contact for GaN High‐Electron‐Mobility Transistors
Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
On the origin of the turn-on voltage drop of GaN-based current aperture vertical electron transistors
GaN-based Tri-gate high electron mobility transistors
GaN-based Tri-gate high electron mobility transistors
GaN-based high electron mobility transistors with high Al-content barriers
AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
Reliability studies of GaN High Electron Mobility Transistors
Biofunctionalization of GaN/AlGaN/GaN High Electron Mobility Transistors
AlGaN,GaN-based millimeter-wave high electron mobility transistors
Fabrication and characterization of AlGaN/GaN high electron mobility transistors
Au‐Free Ohmic Contact for GaN High‐Electron‐Mobility Transistors
Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)