Hochschulschrift
Optimization and characterization of GaN-based high electron mobility transistors
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783844006834
- Dimensions
-
21 cm, 248 g
- Extent
-
VIII, 153 S.
- Language
-
Englisch
- Notes
-
Ill., graph. Darst.
Zugl.: Zürich, Eidgenöss. Techn. Hochsch., Diss., 2011
- Classification
-
Elektrotechnik, Elektronik
- Keyword
-
HEMT
Galliumnitrid
Millimeterwelle
Passivierung
Trockenätzen
Ionenimplantation
HEMT
Galliumnitrid
Aluminiumnitrid
Halbleitersubstrat
Silicium
Millimeterwelle
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.06.2025, 2:14 PM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Sun, Haifeng
- Shaker
Time of origin
- 2012
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