Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
-
online resource.
- Erschienen in
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Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors ; volume:9 ; number:1 ; day:28 ; month:10 ; year:2014 ; pages:1-5 ; date:12.2014
Nanoscale research letters ; 9, Heft 1 (28.10.2014), 1-5, 12.2014
- Urheber
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Li, Liuan
Nakamura, Ryosuke
Wang, Qingpeng
Jiang, Ying
Ao, Jin-Ping
- Beteiligte Personen und Organisationen
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SpringerLink (Online service)
- DOI
-
10.1186/1556-276X-9-590
- URN
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urn:nbn:de:101:1-2021082420472665652994
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:58 MESZ
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Beteiligte
- Li, Liuan
- Nakamura, Ryosuke
- Wang, Qingpeng
- Jiang, Ying
- Ao, Jin-Ping
- SpringerLink (Online service)
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