Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
2045-2322
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors ; volume:8 ; number:1 ; day:17 ; month:1 ; year:2018 ; pages:1-7 ; date:12.2018
Scientific reports ; 8, Heft 1 (17.1.2018), 1-7, 12.2018

Classification
Naturwissenschaften

Creator
Cui, Peng
Contributor
Lv, Yuanjie
Liu, Huan
Cheng, Aijie
Fu, Chen
Lin, Zhaojun
SpringerLink (Online service)

DOI
10.1038/s41598-018-19510-y
URN
urn:nbn:de:1111-2018041121981
Rights
Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:56 AM CEST

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Associated

  • Cui, Peng
  • Lv, Yuanjie
  • Liu, Huan
  • Cheng, Aijie
  • Fu, Chen
  • Lin, Zhaojun
  • SpringerLink (Online service)

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