Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
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online resource.
- Erschienen in
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Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors ; volume:7 ; number:1 ; day:3 ; month:8 ; year:2012 ; pages:1-5 ; date:12.2012
Nanoscale research letters ; 7, Heft 1 (3.8.2012), 1-5, 12.2012
- Urheber
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Lv, Yuanjie
Lin, Zhaojun
Meng, Lingguo
Luan, Chongbiao
Cao, Zhifang
Yu, Yingxia
Feng, Zhihong
Wang, Zhanguo
- Beteiligte Personen und Organisationen
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SpringerLink (Online service)
- DOI
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10.1186/1556-276X-7-434
- URN
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urn:nbn:de:101:1-2021082720164829635333
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2025, 10:54 MESZ
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Beteiligte
- Lv, Yuanjie
- Lin, Zhaojun
- Meng, Lingguo
- Luan, Chongbiao
- Cao, Zhifang
- Yu, Yingxia
- Feng, Zhihong
- Wang, Zhanguo
- SpringerLink (Online service)
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