Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2045-2322
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
-
online resource.
- Erschienen in
-
Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors ; volume:8 ; number:1 ; day:13 ; month:6 ; year:2018 ; pages:1-10 ; date:12.2018
Scientific reports ; 8, Heft 1 (13.6.2018), 1-10, 12.2018
- Klassifikation
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Naturwissenschaften
- Urheber
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Cui, Peng
- Beteiligte Personen und Organisationen
-
Mo, Jianghui
Fu, Chen
Lv, Yuanjie
Liu, Huan
Cheng, Aijie
Luan, Chongbiao
Zhou, Yang
Dai, Gang
Lin, Zhaojun
SpringerLink (Online service)
- DOI
-
10.1038/s41598-018-27357-6
- URN
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urn:nbn:de:101:1-2018081216280423852120
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
- 15.08.2025, 07:33 MESZ
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Beteiligte
- Cui, Peng
- Mo, Jianghui
- Fu, Chen
- Lv, Yuanjie
- Liu, Huan
- Cheng, Aijie
- Luan, Chongbiao
- Zhou, Yang
- Dai, Gang
- Lin, Zhaojun
- SpringerLink (Online service)
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