Hochschulschrift
Electron devices based on ferroelectric hafnium oxide thin films
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
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9783959085526
3959085524
- Dimensions
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21 cm
- Extent
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x, 303 Seiten
- Language
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Englisch
- Notes
-
Illustrationen
Dresden University of Technology, Dissertation, 2021
- Bibliographic citation
-
Dresdner Beiträge zur Sensorik ; Band 85
- Classification
-
Physik
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.06.2025, 1:59 PM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Kämpfe, Thomas
- TUDpress
Time of origin
- 2022
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Impedance Spectroscopy on Hafnium Oxide‐Based Memristive Devices
Pyroelectricity of silicon-doped hafnium oxide thin films
Novel Fluorite Structure Ferroelectric and Antiferroelectric Hafnium Oxide-based Nonvolatile Memories
Pyroelectric and electrocaloric effects in hafnium oxide thin films
Material development of doped hafnium oxide for non-volatile ferroelectric memory application
Hafnium oxide based ferroelectric devices for memories and beyond
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Influence of moisture on the ferroelectric properties of sputtered hafnium oxide thin films
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
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Lanthanum-Doped Hafnium Oxide : A Robust Ferroelectric Material
Impedance Spectroscopy on Hafnium Oxide‐Based Memristive Devices
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