Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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In: MRS bulletin : The Materials Research Society, Erscheinungsort: Cambridge, Verlag: Cambridge University Press, Erscheinungsjahr: 2018, Jahrgang: 43, Heft: 5, Seiten: 340-346, ISSN: 0883-7694, E-ISSN: 1938-1425
- Ereignis
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Veröffentlichung
- (wo)
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Dresden
- (wer)
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Technische Universität Dresden
- (wann)
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2020
- Urheber
- URN
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urn:nbn:de:bsz:14-qucosa2-706890
- Rechteinformation
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:49 MEZ
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Beteiligte
- Mikolajick, Thomas
- Slesazeck, Stefan
- Park, Min Hyuk
- Schröder, Uwe
- Technische Universität Dresden
Entstanden
- 2020
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