Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: In: MRS Bulletin, Erscheinungsjahr: 2018, Jahrgang: 43, Seiten: 340-346, E-ISSN: 1938-1425

Event: Veröffentlichung

(where): Dresden

(who): Technische Universität Dresden

(when): 2022

Creator: Mikolajick, Thomas
Slesazeck, Stefan
Park, Min Hyuk
Schroeder, Uwe

URN: urn:nbn:de:bsz:14-qucosa2-814642

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:28 AM CEST

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Associated

Mikolajick, Thomas
Slesazeck, Stefan
Park, Min Hyuk
Schroeder, Uwe
Technische Universität Dresden

Time of origin

2022

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Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

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Other Objects (12)

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

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