Comparative Study of Reliability of Ferroelectric and Anti-Ferroelectric Memories
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Erschienen in
-
In: IEEE transactions on device and materials reliability. 2018, 18(2), S. 154-162 . IEEE. ISSN 1558-2574.
- Ereignis
-
Veröffentlichung
- (wo)
-
Dresden
- (wer)
-
Technische Universität Dresden
- (wann)
-
2021
- Urheber
-
Pešić, Milan
Schroeder, Uwe
Slesazeck, Stefan
Mikolajick, Thomas
- URN
-
urn:nbn:de:bsz:14-qucosa2-767094
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:53 MEZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Pešić, Milan
- Schroeder, Uwe
- Slesazeck, Stefan
- Mikolajick, Thomas
- Technische Universität Dresden
Entstanden
- 2021
Ähnliche Objekte (12)
Ferroelectric memories
Ferroelectric Hf₁₋ₓZrₓO₂ Memories : device Reliability and Depolarization Fields
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
Advanced circuit design of gigabit density ferroelectric random access memories
Advanced circuit design of gigabit density ferroelectric random access memories
Next Generation Ferroelectric Memories enabled by Hafnium Oxide
Hafnium oxide based ferroelectric devices for memories and beyond
Design of a ferroelectric bolometer
Optimization of performance and reliability of HZO-based capacitors for ferroelectric memory applications
Optimization of performance and reliability of HZO-based capacitors for ferroelectric memory applications
Ferroelectric random access memories : fundamentals and applications ; with 12 tables
Ferroelectric memories
Ferroelectric Hf₁₋ₓZrₓO₂ Memories : device Reliability and Depolarization Fields
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
Advanced circuit design of gigabit density ferroelectric random access memories
Advanced circuit design of gigabit density ferroelectric random access memories
Next Generation Ferroelectric Memories enabled by Hafnium Oxide
Hafnium oxide based ferroelectric devices for memories and beyond
Design of a ferroelectric bolometer
Optimization of performance and reliability of HZO-based capacitors for ferroelectric memory applications
Optimization of performance and reliability of HZO-based capacitors for ferroelectric memory applications
Ferroelectric random access memories : fundamentals and applications ; with 12 tables
Ferroelectric memories
Ferroelectric Hf₁₋ₓZrₓO₂ Memories : device Reliability and Depolarization Fields
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
Advanced circuit design of gigabit density ferroelectric random access memories
Advanced circuit design of gigabit density ferroelectric random access memories
Next Generation Ferroelectric Memories enabled by Hafnium Oxide
Hafnium oxide based ferroelectric devices for memories and beyond
Design of a ferroelectric bolometer
Optimization of performance and reliability of HZO-based capacitors for ferroelectric memory applications
Optimization of performance and reliability of HZO-based capacitors for ferroelectric memory applications