Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf₀.₅Zr₀.₅O₂/Al₂O₃ Capacitor Stacks

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Notes: In: 2018 48th European Solid-State Device Research Conference (ESSDERC), Herausgeber: Institute of Electrical and Electronics Engineers, Erscheinungsort: New York, NY, Verlag: IEEE, Erscheinungsjahr: 2018, Seiten: 142-145

Event: Veröffentlichung

(where): Dresden

(who): Technische Universität Dresden

(when): 2021

Creator: Max, Benjamin
Hoffmann, Michael
Slesazeck, Stefan
Mikolajick, Thomas

URN: urn:nbn:de:bsz:14-qucosa2-768328

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.12.2024, 6:25 AM CET

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Associated

Max, Benjamin
Hoffmann, Michael
Slesazeck, Stefan
Mikolajick, Thomas
Technische Universität Dresden

Time of origin

2021

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Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf₀.₅Zr₀.₅O₂/Al₂O₃ Capacitor Stacks

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Other Objects (12)

Retention Characteristics of Hf₀.₅Zr₀.₅O₂-based Ferroelectric Tunnel Junctions

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