Lanthanum-Doped Hafnium Oxide : A Robust Ferroelectric Material

to connected objects

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
In: Inorganic Chemistry, Erscheinungsjahr: 2018, Jahrgang: 57, Seiten: 2752-2765,E-ISSN: 1520-510X

Event
Veröffentlichung
(where)
Dresden
(who)
Technische Universität Dresden
(when)
2022
Creator
Schroeder, Uwe
Richter, Claudia
Park, Min Hyuk
Schenk, Tony
Pesič, Milan
Hoffmann, Michael
Fengler, Franz P. G.
Pohl, Darius
Rellinghaus, Bernd
Zhou, Chuanzhen
Chung, Ching-Chang
Jones, Jacob L.
Mikolajick, Thomas

URN
urn:nbn:de:bsz:14-qucosa2-810386
Rights
Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:28 AM CEST

Data provider

This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Show original at data provider

Associated

  • Schroeder, Uwe
  • Richter, Claudia
  • Park, Min Hyuk
  • Schenk, Tony
  • Pesič, Milan
  • Hoffmann, Michael
  • Fengler, Franz P. G.
  • Pohl, Darius
  • Rellinghaus, Bernd
  • Zhou, Chuanzhen
  • Chung, Ching-Chang
  • Jones, Jacob L.
  • Mikolajick, Thomas
  • Technische Universität Dresden

Time of origin

  • 2022

Other Objects (12)

Verborgene Energielandschaften : Negative Kapazität in ferroelektrischen Schichten

Verborgene Energielandschaften : Negative Kapazität in ferroelektrischen Schichten

Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf₀.₅Zr₀.₅O₂/Al₂O₃ Capacitor Stacks

Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf₀.₅Zr₀.₅O₂/Al₂O₃ Capacitor Stacks

Retention Characteristics of Hf₀.₅Zr₀.₅O₂-based Ferroelectric Tunnel Junctions

Retention Characteristics of Hf₀.₅Zr₀.₅O₂-based Ferroelectric Tunnel Junctions

On the stabilization of ferroelectric negative capacitance in nanoscale devices

On the stabilization of ferroelectric negative capacitance in nanoscale devices

Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf 0.5 Zr 0.5 O 2 Thin Films

Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf 0.5 Zr 0.5 O 2 Thin Films

Hafnium oxide based ferroelectric devices for memories and beyond

Hafnium oxide based ferroelectric devices for memories and beyond

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

Intrinsic Nature of Negative Capacitance in Multidomain Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric/Dielectric Heterostructures

Intrinsic Nature of Negative Capacitance in Multidomain Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric/Dielectric Heterostructures

Ferroelectric Hf₁₋ₓZrₓO₂ Memories : device Reliability and Depolarization Fields

Ferroelectric Hf₁₋ₓZrₓO₂ Memories : device Reliability and Depolarization Fields

Patentverleihungen (früher: Gewerbeprivilegien) durch das Ministerium des Innern

Archivale

Patentverleihungen (früher: Gewerbeprivilegien) durch das Ministerium des Innern

Der Menschen kurtzes ... Leben : auß dem 90. Psalm v. 10. bey der Leichenbestattung ... Joh. Saltzmanns Münsterisch. Voigthey-Verwalters ... in ein Pred. entworffen

Der Menschen kurtzes ... Leben : auß dem 90. Psalm v. 10. bey der Leichenbestattung ... Joh. Saltzmanns Münsterisch. Voigthey-Verwalters ... in ein Pred. entworffen

Related objects