Ferroelectric FETs With 20-nm-Thick HfO₂ Layer for Large Memory Window and High Performance
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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In: IEEE Transactions on Electron Devices : ED#a publication of the IEEE Electron Devices Society, Erscheinungsjahr: 2019, Jahrgang: 66, Heft: 9, Seiten: 3828-3833, ISSN: 0018-9383, E-ISSN: 1557-9646
- Ereignis
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Veröffentlichung
- (wo)
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Dresden
- (wer)
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Technische Universität Dresden
- (wann)
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2021
- Urheber
- URN
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urn:nbn:de:bsz:14-qucosa2-767944
- Rechteinformation
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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25.03.2025, 13:53 MEZ
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Beteiligte
- Mulaosmanovic, Halid
- Breyer, Evelyn T.
- Mikolajick, Thomas
- Slesazeck, Stefan
- Technische Universität Dresden
Entstanden
- 2021
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