Material perspectives of HfO₂-based ferroelectric films for device applications
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
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In: IEEE International Electron Devices Meeting (IEDM). San Francisco, 07.-11.12.2019
- Ereignis
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Veröffentlichung
- (wo)
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Dresden
- (wer)
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Technische Universität Dresden
- (wann)
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2022
- Urheber
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Toriumi, Akira
Xu, Lun
Mori, Yuki
Tian, Xuan
Lomenzo, Patrick D.
Mulaosmanovic, Halid
Materano, Monica
Mikolajick, Thomas
Schroeder, Uwe
- URN
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urn:nbn:de:bsz:14-qucosa2-796473
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:46 MEZ
Datenpartner
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Beteiligte
- Toriumi, Akira
- Xu, Lun
- Mori, Yuki
- Tian, Xuan
- Lomenzo, Patrick D.
- Mulaosmanovic, Halid
- Materano, Monica
- Mikolajick, Thomas
- Schroeder, Uwe
- Technische Universität Dresden
Entstanden
- 2022
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Prospects for energy-efficient edge computing with integrated HfO₂-based ferroelectric devices
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Effect of Annealing Ferroelectric HfO₂ Thin Films: In Situ, High Temperature X-Ray Diffraction
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