Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering - CORRECTION
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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In: Advanced Electronic Materials, Erscheinungsjahr: 2019, Jahrgang: 6, Heft: 20, Seiten: 1901528-1901528, E-ISSN: 2199-160X
- Event
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Veröffentlichung
- (where)
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Dresden
- (who)
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Technische Universität Dresden
- (when)
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2022
- Creator
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Mittmann, Terence
Materano, Monica
Lomenzo, Patrick D.
Park, Min Hyuk
Stolichnov, Igor
Cavalieri, Matteo
Zhou, Chuanzhen
Chung, Ching-Chang
Jones, Jacob L.
Szyjka, Thomas
Müller, Martina
Kersch, Alfred
Mikolajick, Thomas
Schroeder, Uwe
- URN
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urn:nbn:de:bsz:14-qucosa2-805249
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:50 PM CET
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Mittmann, Terence
- Materano, Monica
- Lomenzo, Patrick D.
- Park, Min Hyuk
- Stolichnov, Igor
- Cavalieri, Matteo
- Zhou, Chuanzhen
- Chung, Ching-Chang
- Jones, Jacob L.
- Szyjka, Thomas
- Müller, Martina
- Kersch, Alfred
- Mikolajick, Thomas
- Schroeder, Uwe
- Technische Universität Dresden
Time of origin
- 2022
Other Objects (12)
Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering
Interplay between ferroelectric and resistive switching in doped crystalline HfO₂
Material perspectives of HfO₂-based ferroelectric films for device applications
Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂
Piezoelectric ZnO films deposited by RF magnetron sputtering for microfluidic applications
Prospects for energy-efficient edge computing with integrated HfO₂-based ferroelectric devices
Review and perspective on ferroelectric HfO₂-based thin films for memory applications
Strain Effects by Surface Oxidation of Cu3N Thin Films Deposited by DC Magnetron Sputtering
Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfₓZr₍₁₋ₓ₎ O₂ Ultrathin Capacitors
Uniting The Trinity of Ferroelectric HfO₂ Memory Devices in a Single Memory Cell
Surface Stoichiometry and Depth Profile of Tix-CuyNz Thin Films Deposited by Magnetron Sputtering
Effect of Annealing Ferroelectric HfO₂ Thin Films: In Situ, High Temperature X-Ray Diffraction
Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering
Interplay between ferroelectric and resistive switching in doped crystalline HfO₂
Material perspectives of HfO₂-based ferroelectric films for device applications
Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂
Piezoelectric ZnO films deposited by RF magnetron sputtering for microfluidic applications
Prospects for energy-efficient edge computing with integrated HfO₂-based ferroelectric devices
Review and perspective on ferroelectric HfO₂-based thin films for memory applications
Strain Effects by Surface Oxidation of Cu3N Thin Films Deposited by DC Magnetron Sputtering
Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfₓZr₍₁₋ₓ₎ O₂ Ultrathin Capacitors
Uniting The Trinity of Ferroelectric HfO₂ Memory Devices in a Single Memory Cell
Surface Stoichiometry and Depth Profile of Tix-CuyNz Thin Films Deposited by Magnetron Sputtering
Effect of Annealing Ferroelectric HfO₂ Thin Films: In Situ, High Temperature X-Ray Diffraction
Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering
Interplay between ferroelectric and resistive switching in doped crystalline HfO₂
Material perspectives of HfO₂-based ferroelectric films for device applications
Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂
Piezoelectric ZnO films deposited by RF magnetron sputtering for microfluidic applications
Prospects for energy-efficient edge computing with integrated HfO₂-based ferroelectric devices
Review and perspective on ferroelectric HfO₂-based thin films for memory applications
Strain Effects by Surface Oxidation of Cu3N Thin Films Deposited by DC Magnetron Sputtering
Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfₓZr₍₁₋ₓ₎ O₂ Ultrathin Capacitors
Uniting The Trinity of Ferroelectric HfO₂ Memory Devices in a Single Memory Cell
Surface Stoichiometry and Depth Profile of Tix-CuyNz Thin Films Deposited by Magnetron Sputtering