Material perspectives of HfO₂-based ferroelectric films for device applications
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
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Englisch
- Notes
-
In: IEEE International Electron Devices Meeting (IEDM). San Francisco, 07.-11.12.2019
- Event
-
Veröffentlichung
- (where)
-
Dresden
- (who)
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Technische Universität Dresden
- (when)
-
2022
- Creator
-
Toriumi, Akira
Xu, Lun
Mori, Yuki
Tian, Xuan
Lomenzo, Patrick D.
Mulaosmanovic, Halid
Materano, Monica
Mikolajick, Thomas
Schroeder, Uwe
- URN
-
urn:nbn:de:bsz:14-qucosa2-796473
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:46 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Toriumi, Akira
- Xu, Lun
- Mori, Yuki
- Tian, Xuan
- Lomenzo, Patrick D.
- Mulaosmanovic, Halid
- Materano, Monica
- Mikolajick, Thomas
- Schroeder, Uwe
- Technische Universität Dresden
Time of origin
- 2022
Other Objects (12)
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Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering
Prospects for energy-efficient edge computing with integrated HfO₂-based ferroelectric devices
Review and perspective on ferroelectric HfO₂-based thin films for memory applications
Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering - CORRECTION
Uniting The Trinity of Ferroelectric HfO₂ Memory Devices in a Single Memory Cell
Effect of Annealing Ferroelectric HfO₂ Thin Films: In Situ, High Temperature X-Ray Diffraction
Simulation of integrate-and-fire neuron circuits using HfO₂-based ferroelectric field effect transistors
Ferroelectric FETs With 20-nm-Thick HfO₂ Layer for Large Memory Window and High Performance
Thermal stability of magnetron sputtered W/HfO₂ and Ir/HfO₂ thin films used as selective emitter in thermophotovoltaic applications
Structure-Property-Correlations in HfO₂ based Memristive Devices
Interplay between ferroelectric and resistive switching in doped crystalline HfO₂
Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂
Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering
Prospects for energy-efficient edge computing with integrated HfO₂-based ferroelectric devices
Review and perspective on ferroelectric HfO₂-based thin films for memory applications
Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering - CORRECTION
Uniting The Trinity of Ferroelectric HfO₂ Memory Devices in a Single Memory Cell
Effect of Annealing Ferroelectric HfO₂ Thin Films: In Situ, High Temperature X-Ray Diffraction
Simulation of integrate-and-fire neuron circuits using HfO₂-based ferroelectric field effect transistors
Ferroelectric FETs With 20-nm-Thick HfO₂ Layer for Large Memory Window and High Performance
Thermal stability of magnetron sputtered W/HfO₂ and Ir/HfO₂ thin films used as selective emitter in thermophotovoltaic applications
Structure-Property-Correlations in HfO₂ based Memristive Devices
Interplay between ferroelectric and resistive switching in doped crystalline HfO₂
Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂
Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering
Prospects for energy-efficient edge computing with integrated HfO₂-based ferroelectric devices
Review and perspective on ferroelectric HfO₂-based thin films for memory applications
Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering - CORRECTION
Uniting The Trinity of Ferroelectric HfO₂ Memory Devices in a Single Memory Cell
Effect of Annealing Ferroelectric HfO₂ Thin Films: In Situ, High Temperature X-Ray Diffraction
Simulation of integrate-and-fire neuron circuits using HfO₂-based ferroelectric field effect transistors
Ferroelectric FETs With 20-nm-Thick HfO₂ Layer for Large Memory Window and High Performance
Thermal stability of magnetron sputtered W/HfO₂ and Ir/HfO₂ thin films used as selective emitter in thermophotovoltaic applications