Interplay between ferroelectric and resistive switching in doped crystalline HfO₂
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
In: Journal of Applied Physics, Erscheinungsjahr: 2018, Jahrgang: 123, Heft: 13, Seiten: 134102-1-134102-9, E-ISSN: 1089-7550
- Event
-
Veröffentlichung
- (where)
-
Dresden
- (who)
-
Technische Universität Dresden
- (when)
-
2022
- Creator
-
Max, Benjamin
Pešić, Milan
Slesazeck, Stefan
Mikolajick, Thomas
- URN
-
urn:nbn:de:bsz:14-qucosa2-804156
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:44 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Max, Benjamin
- Pešić, Milan
- Slesazeck, Stefan
- Mikolajick, Thomas
- Technische Universität Dresden
Time of origin
- 2022
Other Objects (12)
Material perspectives of HfO₂-based ferroelectric films for device applications
Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂
Resistive switching in ferroelectric polycrystalline Yttrium Manganese Oxide thin films
Origin of Temperature-Dependent Ferroelectricity in SiDoped HfO₂
Lanthanum-Doped Hafnium Oxide : A Robust Ferroelectric Material
Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering
Prospects for energy-efficient edge computing with integrated HfO₂-based ferroelectric devices
Review and perspective on ferroelectric HfO₂-based thin films for memory applications
Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering - CORRECTION
Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfₓZr₍₁₋ₓ₎ O₂ Ultrathin Capacitors
Uniting The Trinity of Ferroelectric HfO₂ Memory Devices in a Single Memory Cell
Domain wall mobility and roughening in doped ferroelectric hexagonal manganites
Material perspectives of HfO₂-based ferroelectric films for device applications
Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂
Resistive switching in ferroelectric polycrystalline Yttrium Manganese Oxide thin films
Origin of Temperature-Dependent Ferroelectricity in SiDoped HfO₂
Lanthanum-Doped Hafnium Oxide : A Robust Ferroelectric Material
Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering
Prospects for energy-efficient edge computing with integrated HfO₂-based ferroelectric devices
Review and perspective on ferroelectric HfO₂-based thin films for memory applications
Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering - CORRECTION
Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfₓZr₍₁₋ₓ₎ O₂ Ultrathin Capacitors
Uniting The Trinity of Ferroelectric HfO₂ Memory Devices in a Single Memory Cell
Domain wall mobility and roughening in doped ferroelectric hexagonal manganites
Material perspectives of HfO₂-based ferroelectric films for device applications
Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂
Resistive switching in ferroelectric polycrystalline Yttrium Manganese Oxide thin films
Origin of Temperature-Dependent Ferroelectricity in SiDoped HfO₂
Lanthanum-Doped Hafnium Oxide : A Robust Ferroelectric Material
Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering
Prospects for energy-efficient edge computing with integrated HfO₂-based ferroelectric devices
Review and perspective on ferroelectric HfO₂-based thin films for memory applications
Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering - CORRECTION
Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfₓZr₍₁₋ₓ₎ O₂ Ultrathin Capacitors
Uniting The Trinity of Ferroelectric HfO₂ Memory Devices in a Single Memory Cell