Interplay between ferroelectric and resistive switching in doped crystalline HfO₂
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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In: Journal of Applied Physics, Erscheinungsjahr: 2018, Jahrgang: 123, Heft: 13, Seiten: 134102-1-134102-9, E-ISSN: 1089-7550
- Ereignis
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Veröffentlichung
- (wo)
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Dresden
- (wer)
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Technische Universität Dresden
- (wann)
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2022
- Urheber
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Max, Benjamin
Pešić, Milan
Slesazeck, Stefan
Mikolajick, Thomas
- URN
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urn:nbn:de:bsz:14-qucosa2-804156
- Rechteinformation
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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25.03.2025, 13:44 MEZ
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Beteiligte
- Max, Benjamin
- Pešić, Milan
- Slesazeck, Stefan
- Mikolajick, Thomas
- Technische Universität Dresden
Entstanden
- 2022
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