Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
2045-2322
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
online resource.
- Erschienen in
-
Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors ; volume:8 ; number:1 ; day:17 ; month:1 ; year:2018 ; pages:1-7 ; date:12.2018
Scientific reports ; 8, Heft 1 (17.1.2018), 1-7, 12.2018
- Klassifikation
-
Naturwissenschaften
- Urheber
-
Cui, Peng
- Beteiligte Personen und Organisationen
-
Lv, Yuanjie
Liu, Huan
Cheng, Aijie
Fu, Chen
Lin, Zhaojun
SpringerLink (Online service)
- DOI
-
10.1038/s41598-018-19510-y
- URN
-
urn:nbn:de:1111-2018041121981
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:56 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Cui, Peng
- Lv, Yuanjie
- Liu, Huan
- Cheng, Aijie
- Fu, Chen
- Lin, Zhaojun
- SpringerLink (Online service)
Ähnliche Objekte (12)
Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors
Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
Cubic AlGaN/GaN hetero-junction field-effect transistors : fabrication and characterisation
Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
Normally‐Off Operation of Lateral Field‐Effect Transistors Fabricated from Ultrapure GaN/AlGaN Heterostructures
GaN-based heterostructure field effect transistors and MMICs for high frequency applications
Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
A 2.5 ns 8x8-b parallel multiplier using 0.5 μm GaAs/GaAlAs heterostructure field effect transistors
Enzyme-modified solution-gated AlGaN/GaN field-effect transistors for quantitative analysis of covalently immobilized enzymes
Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors
Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
Cubic AlGaN/GaN hetero-junction field-effect transistors : fabrication and characterisation
Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
Normally‐Off Operation of Lateral Field‐Effect Transistors Fabricated from Ultrapure GaN/AlGaN Heterostructures
GaN-based heterostructure field effect transistors and MMICs for high frequency applications
Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
A 2.5 ns 8x8-b parallel multiplier using 0.5 μm GaAs/GaAlAs heterostructure field effect transistors
Enzyme-modified solution-gated AlGaN/GaN field-effect transistors for quantitative analysis of covalently immobilized enzymes
Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors
Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
Cubic AlGaN/GaN hetero-junction field-effect transistors : fabrication and characterisation
Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers
Normally‐Off Operation of Lateral Field‐Effect Transistors Fabricated from Ultrapure GaN/AlGaN Heterostructures
GaN-based heterostructure field effect transistors and MMICs for high frequency applications
Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
A 2.5 ns 8x8-b parallel multiplier using 0.5 μm GaAs/GaAlAs heterostructure field effect transistors