Hochschulschrift
On the mechanisms of hydrogen implantation induced silicon surface layer cleavage
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Maße
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28 cm
- Umfang
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III, 196 S.
- Sprache
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Englisch
- Anmerkungen
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Ill., graph. Darst.
Marburg, Univ., Diss., 2001
- Schlagwort
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Silicium
Wasserstoff
Ionenimplantation
Abspalten
- Urheber
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Höchbauer, Tobias
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.06.2025, 13:43 MESZ
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Objekttyp
- Hochschulschrift
Beteiligte
- Höchbauer, Tobias
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