Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 1543-186X

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias ; day:3 ; month:1 ; year:2021 ; pages:1-5
Journal of electronic materials ; (3.1.2021), 1-5

Classification: Elektrotechnik, Elektronik

Creator: Lai, Yu-Chen
Zhong, Yi-Nan
Tsai, Ming-Yan
Hsin, Yue-Ming

Contributor: SpringerLink (Online service)

DOI: 10.1007/s11664-020-08691-w

URN: urn:nbn:de:101:1-2021020500550701263254

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:26 AM CEST

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Lai, Yu-Chen
Zhong, Yi-Nan
Tsai, Ming-Yan
Hsin, Yue-Ming
SpringerLink (Online service)

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Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

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