Technology and Physics of Gate Recessed GaN/AlGaN FETs

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Notes: Stuttgart, Universität Stuttgart, Diplomarbeit

Classification: Physik

Keyword: HEMT

Event: Veröffentlichung

(where): Stuttgart

(who): Universitätsbibliothek der Universität Stuttgart

(when): 2007

Creator: Malik, Adil Mahmood

URN: urn:nbn:de:bsz:93-opus-30157

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 11:00 AM CEST

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Associated

Malik, Adil Mahmood
Universitätsbibliothek der Universität Stuttgart

Time of origin

2007

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Technology and characterization of InAlN/GaN FETs

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Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

Simulationsmodell für einen GaN-HEMT mit Schottky p-GaN-Gate

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Processing approaches and gate dielectrics for AlGaN/GaN-based MISHFET

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Surface and electrical properties of GaN layers : impact on GaN/AlInN FETs

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Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs

Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective

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Technology and Physics of Gate Recessed GaN/AlGaN FETs

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Other Objects (12)

Technology and characterization of InAlN/GaN FETs

Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs

Surface and electrical properties of GaN layers : impact on GaN/AlInN FETs

Entwurf und Technologie von GaN-Heterostruktur-FETs für hohe Leistung

Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs

Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective

Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

Simulationsmodell für einen GaN-HEMT mit Schottky p-GaN-Gate

Studienhefte / Hamburger Fernlehrinstitut Walter Schultz, [...]. GaTe

Studienhefte / Hamburger Fernlehrinstitut Walter Schultz, [...]. GaTe

Processing approaches and gate dielectrics for AlGaN/GaN-based MISHFET

Complementary tunneling-FETs (CTFET) in CMOS technology

Technology and characterization of InAlN/GaN FETs

Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs

Surface and electrical properties of GaN layers : impact on GaN/AlInN FETs

Entwurf und Technologie von GaN-Heterostruktur-FETs für hohe Leistung

Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs

Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective

Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

Simulationsmodell für einen GaN-HEMT mit Schottky p-GaN-Gate

Studienhefte / Hamburger Fernlehrinstitut Walter Schultz, [...]. GaTe

Studienhefte / Hamburger Fernlehrinstitut Walter Schultz, [...]. GaTe

Processing approaches and gate dielectrics for AlGaN/GaN-based MISHFET

Complementary tunneling-FETs (CTFET) in CMOS technology

Technology and characterization of InAlN/GaN FETs

Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs

Surface and electrical properties of GaN layers : impact on GaN/AlInN FETs

Entwurf und Technologie von GaN-Heterostruktur-FETs für hohe Leistung

Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs

Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective

Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

Simulationsmodell für einen GaN-HEMT mit Schottky p-GaN-Gate

Studienhefte / Hamburger Fernlehrinstitut Walter Schultz, [...]. GaTe

Studienhefte / Hamburger Fernlehrinstitut Walter Schultz, [...]. GaTe

Processing approaches and gate dielectrics for AlGaN/GaN-based MISHFET

Complementary tunneling-FETs (CTFET) in CMOS technology

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