- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts ; day:29 ; month:03 ; year:2024 ; extent:7
Advanced materials interfaces ; (29.03.2024) (gesamt 7)
- Creator
-
Klein, Brianna
Allerman, Andrew
Armstrong, Andrew
Rosprim, Mary
Tyznik, Colin
Zhu, Yinxuan
Joishi, Chandan
Chae, Chris
Rajan, Siddharth
- DOI
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10.1002/admi.202301080
- URN
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urn:nbn:de:101:1-2024033013182019418621
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:45 AM CEST
Data provider
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Associated
- Klein, Brianna
- Allerman, Andrew
- Armstrong, Andrew
- Rosprim, Mary
- Tyznik, Colin
- Zhu, Yinxuan
- Joishi, Chandan
- Chae, Chris
- Rajan, Siddharth
Other Objects (12)
Au‐Free Ohmic Contacts and Their Impact on Sub‐Contact Charge Carrier Concentration in AlGaN/GaN Heterostructures
Au‐free ohmic contacts and their impact on sub‐contact charge carrier concentration in AlGaN/GaN heterostructures
Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts
Temperature‐Dependent Characteristics of AlN/Al 0.5 Ga 0.5 N High Electron Mobility Transistors with Highly Degenerate n‐Type GaN Regrown Ohmic Contacts
Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
Optimization of Ohmic Contacts to p-GaAs Nanowires
AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique
Technology and Physics of Gate Recessed GaN/AlGaN FETs
Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs
Processing approaches and gate dielectrics for AlGaN/GaN-based MISHFET
Ohmic contacts to p-GaN using Au/Ni-Mg-O metallization
Untersuchung von miniaturisierten GaAs-AlGaAs-Feldeffekttransistoren und GaAs-InGaAs-AlGaAs-Flash-Speichern
Au‐Free Ohmic Contacts and Their Impact on Sub‐Contact Charge Carrier Concentration in AlGaN/GaN Heterostructures
Au‐free ohmic contacts and their impact on sub‐contact charge carrier concentration in AlGaN/GaN heterostructures
Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts
Temperature‐Dependent Characteristics of AlN/Al 0.5 Ga 0.5 N High Electron Mobility Transistors with Highly Degenerate n‐Type GaN Regrown Ohmic Contacts
Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
Optimization of Ohmic Contacts to p-GaAs Nanowires
AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique
Technology and Physics of Gate Recessed GaN/AlGaN FETs
Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs
Processing approaches and gate dielectrics for AlGaN/GaN-based MISHFET
Ohmic contacts to p-GaN using Au/Ni-Mg-O metallization
Untersuchung von miniaturisierten GaAs-AlGaAs-Feldeffekttransistoren und GaAs-InGaAs-AlGaAs-Flash-Speichern
Au‐Free Ohmic Contacts and Their Impact on Sub‐Contact Charge Carrier Concentration in AlGaN/GaN Heterostructures
Au‐free ohmic contacts and their impact on sub‐contact charge carrier concentration in AlGaN/GaN heterostructures
Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts
Temperature‐Dependent Characteristics of AlN/Al 0.5 Ga 0.5 N High Electron Mobility Transistors with Highly Degenerate n‐Type GaN Regrown Ohmic Contacts
Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
Optimization of Ohmic Contacts to p-GaAs Nanowires
AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique
Technology and Physics of Gate Recessed GaN/AlGaN FETs
Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs
Processing approaches and gate dielectrics for AlGaN/GaN-based MISHFET
Ohmic contacts to p-GaN using Au/Ni-Mg-O metallization