Temperature‐Dependent Characteristics of AlN/Al 0.5 Ga 0.5 N High Electron Mobility Transistors with Highly Degenerate n‐Type GaN Regrown Ohmic Contacts
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Temperature‐Dependent Characteristics of AlN/Al 0.5 Ga 0.5 N High Electron Mobility Transistors with Highly Degenerate n‐Type GaN Regrown Ohmic Contacts ; day:05 ; month:02 ; year:2024 ; extent:5
Physica status solidi / A. A, Applications and materials science ; (05.02.2024) (gesamt 5)
- Urheber
- DOI
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10.1002/pssa.202300848
- URN
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urn:nbn:de:101:1-2024020514155572792010
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:20 MESZ
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Beteiligte
- Maeda, Ryota
- Ueno, Kohei
- Kobayashi, Atsushi
- Fujioka, Hiroshi
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