- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
1884-4057
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
online resource.
- Bibliographic citation
-
Metal-induced n+/n homojunction for ultrahigh electron mobility transistors ; volume:12 ; number:1 ; day:18 ; month:12 ; year:2020 ; pages:1-12 ; date:12.2020
NPG Asia Materials ; 12, Heft 1 (18.12.2020), 1-12, 12.2020
- Creator
-
Park, Ji-Min
Kim, Hyoung-Do
Joh, Hongrae
Jang, Seong Cheol
Park, Kyung
Park, Yun Chang
Nahm, Ho-Hyun
Kim, Yong-Hyun
Jeon, Sanghun
Kim, Hyun-Suk
- Contributor
-
SpringerLink (Online service)
- DOI
-
10.1038/s41427-020-00271-y
- URN
-
urn:nbn:de:101:1-2021012417505137356343
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:20 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Park, Ji-Min
- Kim, Hyoung-Do
- Joh, Hongrae
- Jang, Seong Cheol
- Park, Kyung
- Park, Yun Chang
- Nahm, Ho-Hyun
- Kim, Yong-Hyun
- Jeon, Sanghun
- Kim, Hyun-Suk
- SpringerLink (Online service)
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Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors
Analysis and simulation of high electron mobility transistors
Reliability studies of GaN High Electron Mobility Transistors
GaN-based Tri-gate high electron mobility transistors
GaN-based Tri-gate high electron mobility transistors
:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019)
Optimization and characterization of GaN-based high electron mobility transistors
Cryogenic quantum computer control signal generation using high-electron-mobility transistors
Au‐Free Ohmic Contact for GaN High‐Electron‐Mobility Transistors
Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility
GaN-based high electron mobility transistors with high Al-content barriers
Quasi-zweidimensionale Modellierung des High Electron Mobility Transistor unter Berücksichtigung von Quanteneffekten
Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors
Analysis and simulation of high electron mobility transistors
Reliability studies of GaN High Electron Mobility Transistors
GaN-based Tri-gate high electron mobility transistors
GaN-based Tri-gate high electron mobility transistors
:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019)
Optimization and characterization of GaN-based high electron mobility transistors
Cryogenic quantum computer control signal generation using high-electron-mobility transistors
Au‐Free Ohmic Contact for GaN High‐Electron‐Mobility Transistors
Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility
GaN-based high electron mobility transistors with high Al-content barriers