Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
2150-5551
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
online resource.
- Erschienen in
-
Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility ; volume:14 ; number:1 ; day:19 ; month:4 ; year:2022 ; pages:1-12 ; date:12.2022
Nano-Micro letters ; 14, Heft 1 (19.4.2022), 1-12, 12.2022
- Urheber
-
Yang, Peng
Zha, Jiajia
Gao, Guoyun
Zheng, Long
Huang, Haoxin
Xia, Yunpeng
Xu, Songcen
Xiong, Tengfei
Zhang, Zhuomin
Yang, Zhengbao
Chen, Ye
Ki, Dong-Keun
Liou, Juin J.
Liao, Wugang
Tan, Chaoliang
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
-
10.1007/s40820-022-00852-2
- URN
-
urn:nbn:de:101:1-2022070222344535633214
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:30 MESZ
Datenpartner
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Beteiligte
- Yang, Peng
- Zha, Jiajia
- Gao, Guoyun
- Zheng, Long
- Huang, Haoxin
- Xia, Yunpeng
- Xu, Songcen
- Xiong, Tengfei
- Zhang, Zhuomin
- Yang, Zhengbao
- Chen, Ye
- Ki, Dong-Keun
- Liou, Juin J.
- Liao, Wugang
- Tan, Chaoliang
- SpringerLink (Online service)
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