- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
Sputter Epitaxy of AlN and GaN on Si (111) ; day:11 ; month:12 ; year:2022 ; extent:6
Physica status solidi / A. A, Applications and materials science ; (11.12.2022) (gesamt 6)
- Creator
-
Dadgar, Armin
Hörich, Florian
Borgmann, Ralf
Bläsing, Jürgen
Schmidt, Gordon
Veit, Peter
Christen, Jürgen
Strittmatter, André
- DOI
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10.1002/pssa.202200609
- URN
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urn:nbn:de:101:1-2022121214021466694794
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:34 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Dadgar, Armin
- Hörich, Florian
- Borgmann, Ralf
- Bläsing, Jürgen
- Schmidt, Gordon
- Veit, Peter
- Christen, Jürgen
- Strittmatter, André
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Sputter Epitaxy of Transition Metal Nitrides: Advances in Superconductors, Semiconductors, and Ferroelectrics
Spectral signatures and properties of carbon defects in GaN and AlN
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Modulated growth of thick GaN layers with hydride vapor phase epitaxy (HVPE)
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ALN
Growth optimization of nonpolar Al0.7Sc0.3n(1120)/Al2O3(1102) thin films using reactive magnetron sputter epitaxy
Magnetron sputter deposition of nanostructured AlN thin films
Epitaxial growth of GaN quantum dots on smooth AlN
Pseudo halide vapor phase epitaxy growth of GaN crystals
Lokale Gitterumgebung von Indium in GaN, AlN und InN
Sputter Epitaxy of Transition Metal Nitrides: Advances in Superconductors, Semiconductors, and Ferroelectrics
Spectral signatures and properties of carbon defects in GaN and AlN
Properties of zincblende GaN and (In, Ga,A1)N heterostructures grown by molecular beam epitaxy
Properties of zincblende GaN and (In, Ga, Al) N heterostructures grown by molecular beam epitaxy
Modulated growth of thick GaN layers with hydride vapor phase epitaxy (HVPE)
Molecular beam epitaxy and characterization of doped and undoped cubic GaN layers
ALN
Growth optimization of nonpolar Al0.7Sc0.3n(1120)/Al2O3(1102) thin films using reactive magnetron sputter epitaxy
Magnetron sputter deposition of nanostructured AlN thin films
Epitaxial growth of GaN quantum dots on smooth AlN
Pseudo halide vapor phase epitaxy growth of GaN crystals
Lokale Gitterumgebung von Indium in GaN, AlN und InN
Sputter Epitaxy of Transition Metal Nitrides: Advances in Superconductors, Semiconductors, and Ferroelectrics
Spectral signatures and properties of carbon defects in GaN and AlN
Properties of zincblende GaN and (In, Ga,A1)N heterostructures grown by molecular beam epitaxy
Properties of zincblende GaN and (In, Ga, Al) N heterostructures grown by molecular beam epitaxy
Modulated growth of thick GaN layers with hydride vapor phase epitaxy (HVPE)
Molecular beam epitaxy and characterization of doped and undoped cubic GaN layers
ALN