Sputter Epitaxy of Transition Metal Nitrides: Advances in Superconductors, Semiconductors, and Ferroelectrics
In this review, the epitaxial growth of transition metal nitrides (TMNs) is explored, focusing on sputter epitaxy as a versatile method for developing advanced materials such as NbN superconductors and ScAlN ferroelectrics. In the recent studies, it is shown that, unlike conventional growth techniques, sputter epitaxy enables the deposition of high‐melting‐point transition metals, offering advantages for growing thin films with unique properties. In this review, recent progress in integrating TMNs with nitride semiconductors to fabricate hybrid devices that exhibit both superconducting and ferroelectric characteristics is addressed. These developments underscore the potential of sputter epitaxy as a foundational tool for advancing the next generation of electronic and quantum devices.
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Sputter Epitaxy of Transition Metal Nitrides: Advances in Superconductors, Semiconductors, and Ferroelectrics ; day:05 ; month:01 ; year:2025 ; extent:10
Physica status solidi / A. A, Applications and materials science ; (05.01.2025) (gesamt 10)
- Creator
- DOI
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10.1002/pssa.202400896
- URN
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urn:nbn:de:101:1-2501061306591.494451902133
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:23 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Kobayashi, Atsushi
- Maeda, Takuya
- Akiyama, Toru
- Kawamura, Takahiro
- Honda, Yoshio
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New process approaches to metalorganic vapor phase epitaxy of III-nitrides for high power HEMTs
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Influence of growth temperature on the properties of aluminum nitride thin films prepared by magnetron sputter epitaxy
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Switchable tribology of ferroelectrics
Reactive hard templating : from carbon nitrides to metal nitrides
Proton-controlled molecular ionic ferroelectrics
Plasma assisted molecular beam epitaxy of Al and Ga nitrides
Sputter Epitaxy of AlN and GaN on Si (111)
Growth optimization of nonpolar Al0.7Sc0.3n(1120)/Al2O3(1102) thin films using reactive magnetron sputter epitaxy
New process approaches to metalorganic vapor phase epitaxy of III-nitrides for high power HEMTs
Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere
Influence of growth temperature on the properties of aluminum nitride thin films prepared by magnetron sputter epitaxy
Reactive sputter deposition
Toughening mechanisms of ferroelectrics
Ferroelectrics : principles and applications
Switchable tribology of ferroelectrics
Reactive hard templating : from carbon nitrides to metal nitrides