Hochschulschrift
Molecular beam epitaxy and characterization of doped and undoped cubic GaN layers
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783826566264
3826566262
- Maße
-
21 cm
- Umfang
-
II, 106 S.
- Ausgabe
-
Als Ms. gedr.
- Sprache
-
Englisch
- Anmerkungen
-
Ill., graph. Darst.
Zugl.: Paderborn, Univ., Diss., 1999
- Schlagwort
-
Galliumnitrid
Molekularstrahlepitaxie
Dotierung
Magnesium
Silicium
Galliumnitrid
Dünne Schicht
Photolumineszenz
Hall-Effekt
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.03.2025, 12:24 MEZ
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Dieses Objekt wird bereitgestellt von:
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Objekttyp
- Hochschulschrift
Beteiligte
- Schöttker, Bernd
- Shaker
Entstanden
- 1999
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