Hochschulschrift | Online-Publikation
Properties of zincblende GaN and (In, Ga, Al) N heterostructures grown by molecular beam epitaxy
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Sprache
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Englisch
- Anmerkungen
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Berlin, Humboldt-Univ., Diss., 1999
- Schlagwort
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Galliumnitrid
Zinkblendestruktur
Molekularstrahlepitaxie
Photolumineszenz
Aluminiumnitrid
Galliumnitrid
Indiumnitrid
Mischkristall
Heterostruktur
Molekularstrahlepitaxie
- Urheber
- URN
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urn:nbn:de:kobv:11-1009516
- Rechteinformation
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:32 MESZ
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Objekttyp
- Hochschulschrift
- Online-Publikation
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