Hochschulschrift
Modulated growth of thick GaN layers with hydride vapor phase epitaxy (HVPE)
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Maße
-
30 cm
- Umfang
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118 S.
- Sprache
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Englisch
- Anmerkungen
-
Ill., graph. Darst.
Parallelsacht. in chines. Schr.
Gießen, Univ., Diss., 2001
- Schlagwort
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Galliumnitrid
Gasphasenepitaxie
- Urheber
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.06.2025, 13:32 MESZ
Datenpartner
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Objekttyp
- Hochschulschrift
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