Effect of Cap Thickness on InAs/InP Quantum Dots Grown by Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Effect of Cap Thickness on InAs/InP Quantum Dots Grown by Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy ; day:14 ; month:07 ; year:2021 ; extent:6
Physica status solidi / Rapid research letters. Rapid research letters ; (14.07.2021) (gesamt 6)
- Creator
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Sala, Elisa M.
Godsland, Max
Trapalis, Aristotelis
Heffernan, Jon
- DOI
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10.1002/pssr.202100283
- URN
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urn:nbn:de:101:1-2021071515021291470368
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:50 AM CEST
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Sala, Elisa M.
- Godsland, Max
- Trapalis, Aristotelis
- Heffernan, Jon
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Thin Films of Porphyrin-Based Metal-Organic Frameworks Grown by Liquid-Phase Epitaxy
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Molecular beam epitaxy of quantum dots on misoriented GaAs(111)B by droplet epitaxy
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New process approaches to metalorganic vapor phase epitaxy of III-nitrides for high power HEMTs
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Applications of remote epitaxy and van der Waals epitaxy
Self-assembled (Al)GaInN quantum dots grown by metalorganic vapor phase epitaxy
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Thin Films of Porphyrin-Based Metal-Organic Frameworks Grown by Liquid-Phase Epitaxy
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Droplet Epitaxy Image Contrast in Mirror Electron Microscopy
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New process approaches to metalorganic vapor phase epitaxy of III-nitrides for high power HEMTs
Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy
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