Hochschulschrift | Online-Publikation
Fundamental growth processes on different gallium arsenide surfaces in metal organic vapor phase epitaxy
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Language
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Englisch
- Notes
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Berlin, Techn. Univ., Diss., 2000
- Keyword
-
Galliumarsenid
Kristallfläche
Kristallwachstum
MOCVD-Verfahren
Reflexionsspektroskopie
- Creator
- URN
-
urn:nbn:de:kobv:83-opus-941
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:44 PM CET
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
- Online-Publikation
Associated
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Surface light scattering spectroscopy of the gallium liquid vapor interface
Surface Light Scattering Spectroscopy of the Gallium Liquid-Vapor Interface
Remote epitaxy of cubic gallium nitride on graphene-covered 3C-SiC substrates
Modulated growth of thick GaN layers with hydride vapor phase epitaxy (HVPE)
Growth instabilities of vicinal crystal surfaces during molecular beam epitaxy
Growth instabilities of vicinal crystal surfaces during molecular beam epitaxy
Self-assembled (Al)GaInN quantum dots grown by metalorganic vapor phase epitaxy
New process approaches to metalorganic vapor phase epitaxy of III-nitrides for high power HEMTs
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Quasicrystal surfaces : morphology, phase transitions, and epitaxy
Pseudo halide vapor phase epitaxy growth of GaN crystals
Selective Area Growth of cubic Gallium Nitride by Molecular Beam Epitaxy
Surface light scattering spectroscopy of the gallium liquid vapor interface
Surface Light Scattering Spectroscopy of the Gallium Liquid-Vapor Interface
Remote epitaxy of cubic gallium nitride on graphene-covered 3C-SiC substrates
Modulated growth of thick GaN layers with hydride vapor phase epitaxy (HVPE)
Growth instabilities of vicinal crystal surfaces during molecular beam epitaxy
Growth instabilities of vicinal crystal surfaces during molecular beam epitaxy
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