- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride ; day:16 ; month:05 ; year:2021 ; extent:8
Physica status solidi / Rapid research letters. Rapid research letters ; (16.05.2021) (gesamt 8)
- Creator
-
Zhang, Yuxuan
Chen, Zhaoying
Zhang, Kaitian
Feng, Zixuan
Zhao, Hongping
- DOI
-
10.1002/pssr.202100202
- URN
-
urn:nbn:de:101:1-2021051715020318348692
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:56 AM CEST
Data provider
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Associated
- Zhang, Yuxuan
- Chen, Zhaoying
- Zhang, Kaitian
- Feng, Zixuan
- Zhao, Hongping
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Laser-assisted grinding of Silicon Nitride by picosecond laser
Structural characterization of ion implanted gallium nitride
Indium gallium nitride nanostructures for optoelectronic applications
Aluminium and Gallium Silylimides as Nitride Sources **
Crystal Orientation Dependence of Gallium Nitride Wear
Electrolyte Effect on Photoetching of Gallium Nitride
Metal‐Organic Chemical Vapor Deposition of Aluminum Yttrium Nitride
Metal‐Organic Chemical Vapor Deposition of Aluminum Scandium Nitride
Gallium nitride electronics
Technology of gallium nitride crystal growth
Cathodoluminescence spectra of gallium nitride nanorods
Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier : = Mikrosystem: Gallium Nitride HF Breitband Hochleistungsverstärker
Laser-assisted grinding of Silicon Nitride by picosecond laser
Structural characterization of ion implanted gallium nitride
Indium gallium nitride nanostructures for optoelectronic applications
Aluminium and Gallium Silylimides as Nitride Sources **
Crystal Orientation Dependence of Gallium Nitride Wear