Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy ; volume:218 ; number:3 ; year:2021
Physica status solidi / A. A, Applications and materials science ; 218, Heft 3 (2021)
- Creator
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Strömberg, Axel
Bhargava, Prakhar
Xu, Zhehan
Lourdudoss, Sebastian
Sun, Yan-Ting
- DOI
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10.1002/pssa.202000447
- URN
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urn:nbn:de:101:1-2021031314115696158918
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:21 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Strömberg, Axel
- Bhargava, Prakhar
- Xu, Zhehan
- Lourdudoss, Sebastian
- Sun, Yan-Ting
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