Interfacial Misfit Array Technique for GaSb Growth on GaAs (001) Substrate by Molecular Beam Epitaxy
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
1543-186X
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
online resource.
- Bibliographic citation
-
Interfacial Misfit Array Technique for GaSb Growth on GaAs (001) Substrate by Molecular Beam Epitaxy ; day:7 ; month:9 ; year:2017 ; pages:1-6
Journal of electronic materials ; (7.9.2017), 1-6
- Classification
-
Physik
- Creator
-
Benyahia, D.
- Contributor
-
Kubiszyn, Ł
Michalczewski, K.
Kębłowski, A.
Martyniuk, P.
Piotrowski, J.
Rogalski, A.
SpringerLink (Online service)
- DOI
-
10.1007/s11664-017-5766-4
- URN
-
urn:nbn:de:1111-201711121544
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:27 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Benyahia, D.
- Kubiszyn, Ł
- Michalczewski, K.
- Kębłowski, A.
- Martyniuk, P.
- Piotrowski, J.
- Rogalski, A.
- SpringerLink (Online service)
Other Objects (12)
Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations
Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system
GaAs nanowires : epitaxy, crystal structure-related properties and magnetic heterostructures
GaAs nanowires: Epitaxy, crystal structure-related properties and magnetic heterostructures
Molecular beam epitaxy of quantum dots on misoriented GaAs(111)B by droplet epitaxy
Hochfrequenzverhalten von GaAs, AlGaAs und pseudomorphenen InGaAs, GaAs Mehrfach-Quantenfilm-Laserdioden
High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy
Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy
Various Quantum- and Nano-Structures by III–V Droplet Epitaxy on GaAs Substrates
Laserstimulierte Epitaxie von GaAs
Spin injection into GaAs
Spin injection into GaAs
Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations
Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system
GaAs nanowires : epitaxy, crystal structure-related properties and magnetic heterostructures
GaAs nanowires: Epitaxy, crystal structure-related properties and magnetic heterostructures
Molecular beam epitaxy of quantum dots on misoriented GaAs(111)B by droplet epitaxy
Hochfrequenzverhalten von GaAs, AlGaAs und pseudomorphenen InGaAs, GaAs Mehrfach-Quantenfilm-Laserdioden
High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy
Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy
Various Quantum- and Nano-Structures by III–V Droplet Epitaxy on GaAs Substrates
Laserstimulierte Epitaxie von GaAs
Spin injection into GaAs
Spin injection into GaAs
Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations
Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system
GaAs nanowires : epitaxy, crystal structure-related properties and magnetic heterostructures
GaAs nanowires: Epitaxy, crystal structure-related properties and magnetic heterostructures
Molecular beam epitaxy of quantum dots on misoriented GaAs(111)B by droplet epitaxy
Hochfrequenzverhalten von GaAs, AlGaAs und pseudomorphenen InGaAs, GaAs Mehrfach-Quantenfilm-Laserdioden
High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy
Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy
Various Quantum- and Nano-Structures by III–V Droplet Epitaxy on GaAs Substrates
Laserstimulierte Epitaxie von GaAs
Spin injection into GaAs