Interfacial Misfit Array Technique for GaSb Growth on GaAs (001) Substrate by Molecular Beam Epitaxy
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1543-186X
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
-
online resource.
- Erschienen in
-
Interfacial Misfit Array Technique for GaSb Growth on GaAs (001) Substrate by Molecular Beam Epitaxy ; day:7 ; month:9 ; year:2017 ; pages:1-6
Journal of electronic materials ; (7.9.2017), 1-6
- Klassifikation
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Physik
- Urheber
-
Benyahia, D.
- Beteiligte Personen und Organisationen
-
Kubiszyn, Ł
Michalczewski, K.
Kębłowski, A.
Martyniuk, P.
Piotrowski, J.
Rogalski, A.
SpringerLink (Online service)
- DOI
-
10.1007/s11664-017-5766-4
- URN
-
urn:nbn:de:1111-201711121544
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:27 MESZ
Datenpartner
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Beteiligte
- Benyahia, D.
- Kubiszyn, Ł
- Michalczewski, K.
- Kębłowski, A.
- Martyniuk, P.
- Piotrowski, J.
- Rogalski, A.
- SpringerLink (Online service)
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