Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
-
Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations ; volume:4 ; number:12 ; day:30 ; month:8 ; year:2009 ; pages:1458-1462 ; date:12.2009
Nanoscale research letters ; 4, Heft 12 (30.8.2009), 1458-1462, 12.2009
- Creator
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Jallipalli, A.
Balakrishnan, G.
Huang, SH
Rotter, TJ
Nunna, K.
Liang, BL
Dawson, LR
Huffaker, DL
- Contributor
-
SpringerLink (Online service)
- DOI
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10.1007/s11671-009-9420-9
- URN
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urn:nbn:de:101:1-2021080720381681442005
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:55 AM CEST
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Jallipalli, A.
- Balakrishnan, G.
- Huang, SH
- Rotter, TJ
- Nunna, K.
- Liang, BL
- Dawson, LR
- Huffaker, DL
- SpringerLink (Online service)
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Laserstimulierte Epitaxie von GaAs
Spin injection into GaAs
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X-Ray Diffraction from Periodically Patterned GaAs Nanorods Grown onto GaAs[111]B
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Monolithisch integrierte Schaltungen auf GaAs
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Interfacial Misfit Array Technique for GaSb Growth on GaAs (001) Substrate by Molecular Beam Epitaxy
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Laserstimulierte Epitaxie von GaAs
Spin injection into GaAs
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X-Ray Diffraction from Periodically Patterned GaAs Nanorods Grown onto GaAs[111]B
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