The Origin and Formation Mechanism of an Inclined Line‐like Defect in 4H‐SiC Epilayers
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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The Origin and Formation Mechanism of an Inclined Line‐like Defect in 4H‐SiC Epilayers ; day:22 ; month:01 ; year:2022 ; extent:6
Physica status solidi / B. B, Basic solid state physics ; (22.01.2022) (gesamt 6)
- Creator
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Karhu, Robin
Ghezellou, Misagh
Ul Hassan, Jawad
- DOI
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10.1002/pssb.202100512
- URN
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urn:nbn:de:101:1-2022012214122238522872
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:37 AM CEST
Data provider
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Karhu, Robin
- Ghezellou, Misagh
- Ul Hassan, Jawad
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Dotierung von 4H-SiC durch Ionenimplantation
Combining unsupervised and supervised learning in microscopy enables defect analysis of a full 4H-SiC wafer
Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain
Deep defect centers in 4H and 6H silicon carbide
Aktivierung von Aluminium implantiert in 4H-SiC
Numerische Simulation und Analyse bipolarer 4H-SiC Leistungsbauelemente
Versetzungsverhalten bei der Homoepitaxie von hexagonalem Siliziumkarbid (4H-SiC)
Exhaustive characterization of modified Si vacancies in 4H-SiC
DFT modelling of the edge dislocation in 4H-SiC
Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC
Global defect distribution and their influence on the local real structure of 4H-SiC
Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC
Dotierung von 4H-SiC durch Ionenimplantation
Combining unsupervised and supervised learning in microscopy enables defect analysis of a full 4H-SiC wafer
Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain
Deep defect centers in 4H and 6H silicon carbide
Aktivierung von Aluminium implantiert in 4H-SiC
Numerische Simulation und Analyse bipolarer 4H-SiC Leistungsbauelemente
Versetzungsverhalten bei der Homoepitaxie von hexagonalem Siliziumkarbid (4H-SiC)
Exhaustive characterization of modified Si vacancies in 4H-SiC