Aktivierung von Aluminium implantiert in 4H-SiC

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Deutsch

Notes: Erlangen, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Dissertation, 2024

Classification: Elektrotechnik, Elektronik

Keyword: Aluminium
Siliciumcarbid
Ionenimplantation

Event: Veröffentlichung

(where): Erlangen

(who): Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)

(when): 2025

Creator: Mletschnig, Kristijan Luka

Contributor: Pichler, Peter
Witzigmann, Bernd

DOI: 10.25593/open-fau-1539

URN: urn:nbn:de:101:1-2501240404427.169739095108

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:25 AM CEST

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Associated

Mletschnig, Kristijan Luka
Pichler, Peter
Witzigmann, Bernd
Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)

Time of origin

2025

Other Objects (12)

Hochschulschrift

Dotierung von 4H-SiC durch Ionenimplantation

Exhaustive characterization of modified Si vacancies in 4H-SiC

Hochschulschrift

Numerische Simulation und Analyse bipolarer 4H-SiC Leistungsbauelemente

Investigation of Implanted Boron in 4H-SiC and Iron in 3C-SiC and Experimental/Theoretical Analysis of the Depletion Zone in 4H-SiC MOS Capacitors

Hochschulschrift

Versetzungsverhalten bei der Homoepitaxie von hexagonalem Siliziumkarbid (4H-SiC)

DFT modelling of the edge dislocation in 4H-SiC

Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching

Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

A look underneath the SiO2/4H-SiC interface after N2O thermal treatments

Hochschulschrift

Modeling and simulation of wide bandgap semiconductor devices: 4H/6H-SiC

Hochschulschrift

Modeling and simulation of wide bandgap semiconductor devices : 4H/6H-SiC

Spectral stability of V2 centres in sub-micron 4H-SiC membranes

Hochschulschrift

Dotierung von 4H-SiC durch Ionenimplantation

Exhaustive characterization of modified Si vacancies in 4H-SiC

Hochschulschrift

Numerische Simulation und Analyse bipolarer 4H-SiC Leistungsbauelemente

Investigation of Implanted Boron in 4H-SiC and Iron in 3C-SiC and Experimental/Theoretical Analysis of the Depletion Zone in 4H-SiC MOS Capacitors

Hochschulschrift

Versetzungsverhalten bei der Homoepitaxie von hexagonalem Siliziumkarbid (4H-SiC)

DFT modelling of the edge dislocation in 4H-SiC

Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching

Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

A look underneath the SiO2/4H-SiC interface after N2O thermal treatments

Hochschulschrift

Modeling and simulation of wide bandgap semiconductor devices: 4H/6H-SiC

Hochschulschrift

Modeling and simulation of wide bandgap semiconductor devices : 4H/6H-SiC

Spectral stability of V2 centres in sub-micron 4H-SiC membranes

Hochschulschrift

Dotierung von 4H-SiC durch Ionenimplantation

Exhaustive characterization of modified Si vacancies in 4H-SiC

Hochschulschrift

Numerische Simulation und Analyse bipolarer 4H-SiC Leistungsbauelemente

Investigation of Implanted Boron in 4H-SiC and Iron in 3C-SiC and Experimental/Theoretical Analysis of the Depletion Zone in 4H-SiC MOS Capacitors

Hochschulschrift

Versetzungsverhalten bei der Homoepitaxie von hexagonalem Siliziumkarbid (4H-SiC)

DFT modelling of the edge dislocation in 4H-SiC

Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching

Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

A look underneath the SiO2/4H-SiC interface after N2O thermal treatments

Hochschulschrift

Modeling and simulation of wide bandgap semiconductor devices: 4H/6H-SiC

Hochschulschrift

Modeling and simulation of wide bandgap semiconductor devices : 4H/6H-SiC

Spectral stability of V2 centres in sub-micron 4H-SiC membranes

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Aktivierung von Aluminium implantiert in 4H-SiC

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Contributors, Places and Time

Further information

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Associated

Time of origin

Other Objects (12)

Dotierung von 4H-SiC durch Ionenimplantation

Exhaustive characterization of modified Si vacancies in 4H-SiC

Numerische Simulation und Analyse bipolarer 4H-SiC Leistungsbauelemente

Investigation of Implanted Boron in 4H-SiC and Iron in 3C-SiC and Experimental/Theoretical Analysis of the Depletion Zone in 4H-SiC MOS Capacitors

Versetzungsverhalten bei der Homoepitaxie von hexagonalem Siliziumkarbid (4H-SiC)

DFT modelling of the edge dislocation in 4H-SiC

Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching

Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

A look underneath the SiO2/4H-SiC interface after N2O thermal treatments

Modeling and simulation of wide bandgap semiconductor devices: 4H/6H-SiC

Modeling and simulation of wide bandgap semiconductor devices : 4H/6H-SiC

Spectral stability of V2 centres in sub-micron 4H-SiC membranes

Dotierung von 4H-SiC durch Ionenimplantation

Exhaustive characterization of modified Si vacancies in 4H-SiC

Numerische Simulation und Analyse bipolarer 4H-SiC Leistungsbauelemente

Investigation of Implanted Boron in 4H-SiC and Iron in 3C-SiC and Experimental/Theoretical Analysis of the Depletion Zone in 4H-SiC MOS Capacitors

Versetzungsverhalten bei der Homoepitaxie von hexagonalem Siliziumkarbid (4H-SiC)

DFT modelling of the edge dislocation in 4H-SiC

Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching

Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

A look underneath the SiO2/4H-SiC interface after N2O thermal treatments

Modeling and simulation of wide bandgap semiconductor devices: 4H/6H-SiC

Modeling and simulation of wide bandgap semiconductor devices : 4H/6H-SiC

Spectral stability of V2 centres in sub-micron 4H-SiC membranes

Dotierung von 4H-SiC durch Ionenimplantation

Exhaustive characterization of modified Si vacancies in 4H-SiC

Numerische Simulation und Analyse bipolarer 4H-SiC Leistungsbauelemente

Investigation of Implanted Boron in 4H-SiC and Iron in 3C-SiC and Experimental/Theoretical Analysis of the Depletion Zone in 4H-SiC MOS Capacitors

Versetzungsverhalten bei der Homoepitaxie von hexagonalem Siliziumkarbid (4H-SiC)

DFT modelling of the edge dislocation in 4H-SiC

Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching

Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

A look underneath the SiO2/4H-SiC interface after N2O thermal treatments

Modeling and simulation of wide bandgap semiconductor devices: 4H/6H-SiC

Modeling and simulation of wide bandgap semiconductor devices : 4H/6H-SiC

Spectral stability of V2 centres in sub-micron 4H-SiC membranes

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