Hochschulschrift | Online-Publikation
Effect of point defects and dislocations on electrical and optical properties of III-V semiconductors
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
Halle (Saale), Univ., Diss., 2003
- Klassifikation
-
Physik
- Schlagwort
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Galliumarsenid
Störstelle
Versetzung
Raman-Effekt
Kathodolumineszenz
Galliumnitrid
Versetzung
- Urheber
- URN
-
urn:nbn:de:gbv:3-000005620
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:55 MEZ
Datenpartner
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Objekttyp
- Hochschulschrift
- Online-Publikation
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