Hochschulschrift
Effect of point defects and dislocations on electrical and optical properties of III-V semiconductors
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Maße
-
30 cm
- Umfang
-
II, 85, III S.
- Sprache
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Englisch
- Anmerkungen
-
Ill., graph. Darst.
Halle, Wittenberg, Univ., Diss., 2003
- Klassifikation
-
Physik
- Schlagwort
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Galliumarsenid
Störstelle
Versetzung
Raman-Effekt
Kathodolumineszenz
Galliumnitrid
Versetzung
- Urheber
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.03.2025, 11:43 MEZ
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Objekttyp
- Hochschulschrift
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