Hochschulschrift | Online-Publikation
Effect of point defects and dislocations on electrical and optical properties of III-V semiconductors
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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Halle (Saale), Univ., Diss., 2003
- Classification
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Physik
- Keyword
-
Galliumarsenid
Störstelle
Versetzung
Raman-Effekt
Kathodolumineszenz
Galliumnitrid
Versetzung
- Creator
- URN
-
urn:nbn:de:gbv:3-000005620
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:55 PM CET
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
- Online-Publikation
Associated
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