Smart Design of Fermi Level Pinning in HfO<sub>2</sub>-Based Ferroelectric Memories
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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In: Advanced Functional Materials. Wiley. 2024, 34(3), 2307120. ISSN 1616-301X. eISSN 1616-3028. Available under: doi: 10.1002/adfm.202307120
- Ereignis
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Veröffentlichung
- (wo)
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Konstanz
- (wer)
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KOPS Universität Konstanz
- (wann)
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2024
- Urheber
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Baumgarten, Lutz
Szyjka, Thomas
Mittmann, Terence
Gloskovskii, Andrei
Schlueter, Christoph
Mikolajick, Thomas
Schroeder, Uwe
Müller, Martina
- URN
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urn:nbn:de:bsz:352-2-v7zj7wnxlpx28
- Rechteinformation
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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16.08.2025, 11:34 MESZ
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Beteiligte
- Baumgarten, Lutz
- Szyjka, Thomas
- Mittmann, Terence
- Gloskovskii, Andrei
- Schlueter, Christoph
- Mikolajick, Thomas
- Schroeder, Uwe
- Müller, Martina
- KOPS Universität Konstanz
Entstanden
- 2024
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